Name: TSM018NB03CR-RLG
Brand: Taiwan Semiconductor Corporation
SKU: TSM018NB03CR RLG
Availability: InStock
Rating: 5 (147 reviews)

TSM018NB03CR-RLG

Per Riferimento Soltanto

Numero di parte	TSM018NB03CR-RLG
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 30V 29A/194A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	14.910 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	dic 27 - gen 1 (Scegli una spedizione rapida)
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Stiamo offrendo TSM018NB03CR-RLG per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TSM018NB03CR-RLG

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Corrente - Scarico continuo (Id) @ 25 ° C	29A (Ta), 194A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	7252 pF @ 15 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs	1.8mOhm @ 29A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5x6)
Pacchetto / caso	8-PowerTDFN

TSM018NB03CR-RLG Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM018NB03CR-RLG.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM018NB03CR-RLG

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